ADL8102ACPZN

ADL8102ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1GHz to 22GHz. It provides a typical gain of 27dB at 9GHz to 19GHz, a 2.5dB typical noise figure from 9GHz to 19GHz, a typical output third-order intercept (OIP3) of 25dBm at 1GHz to 9GHz, and a saturated output power (PSAT) of upto 15.5dBm, which requires only 110mA from a 5V supply voltage. It also features inputs and outputs that are internally matched to 50 ohm. The RFIN and RFOUT pins are internally AC-coupled, and the bias inductor is also integrated, which makes it ideal for surface-mounted technology (SMT)-based high-capacity microwave radio applications. It is also used in applications such as telecommunications, satellite communications, military radar, weather radar, civil radar, and electronic warfare.

• Single positive supply (self biased)
• Gain variation over temperature is 0.053dB/°C typical at (TCASE = 25°C)
• Noise figure is 3dB typical at (1GHz to 9GHz, TCASE = 25°C)
• Input return loss is 15dB typical at (1GHz to 9GHz, TCASE = 25°C)
• Output return loss is 18dB typical at (1GHz to 9GHz, TCASE = 25°C)
• 6.5% typical power added efficiency at (1GHz to 9GHz, TCASE = 25°C)
• Supply current (IDQ) is 110mA typical
• Saturated output power is 15.5dBm typical at (1GHz to 9GHz, TCASE = 25°C)
• Second-order intercept (OIP2) is 32dBm typical at (1GHz to 9GHz, TCASE = 25°C)
• Operating temperature range from -40°C to +85°C, 16-lead LFCSP package

Ghi chú

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party