HMC659LC5TR

HMC659LC5 is a GaAs MMIC pHEMT distributed power amplifier. This amplifier provides 19dB of gain, +35dBm output IP3 and +27.5dBm of output power at 1dB gain compression, while requiring 300mA from a +8V supply. Gain flatness is excellent at ±1.4dB from DC - 15GHz making the device ideal for EW, ECM, radar and test equipment applications. This amplifier I/Os are internally matched to 50 ohms with no external components. It is compatible with high volume surface mount manufacturing techniques. It is used in application such as telecom infrastructure, microwave radio & VSAT, military & space, test instrumentation, fibre optics etc.

• Gain flatness is ±0.7dB typ at (DC - 6GHz, TA = +25°C)
• Gain variation over temperature is 0.015dB/°C typ at (DC - 6GHz, TA = +25°C)
• Input return loss 20dB typ at (DC - 6GHz, TA = +25°C)
• Output return loss 19dB typ at (DC - 6GHz, TA = +25°C)
• Saturated output power (Psat) is 28dBm typ at (DC - 6GHz, TA = +25°C)
• Noise figure is 3dB typ at (DC - 6GHz, TA = +25°C)
• Operating temperature is -40°C to 85°C
• Package style is 32-lead QFN

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ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party