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Bipolar Junction Transistor Arrays - BJT

Bipolar Junction Transistor Arrays - BJT (794)

Bipolar RF Transistors

Bipolar RF Transistors (332)

Pre-Biased / Digital Bipolar Transistors

Pre-Biased / Digital Bipolar Transistors (2,923)

Single Bipolar Junction Transistors - BJT

Single Bipolar Junction Transistors - BJT (5,719)

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New Semiconductors - Discretes

600V Gallium Nitride (GaN) Transistor

600V Gallium Nitride (GaN) Transistor

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600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

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XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

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MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

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H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

Get more for less!

Get more for less!

Check our latest additions to high quality products at lower price

NEXPERIA

BSR33PAS - 80 V, 1 A PNP medium power transistor

BSR33PAS - 80 V, 1 A PNP medium power transistor

MOSFET công suất đem đến hiệu suất hệ thống vượt trội

TOSHIBA

MOSFET công suất đem đến hiệu suất hệ thống vượt trội

cho các thiết bị sử dụng năng lượng sạch, điều khiển công nghiệp, cấp nguồn và thiết bị tiêu dùng sử dụng pin