ADPA7005AEHZ

ADPA7005AEHZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32dBm saturated output power (PSAT), >1W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18GHz and 44GHz. It provides 15.5dB of small signal gain and approximately 32dBm of PSAT at 32GHz from a 5V supply. The ADPA7005 has an output IP3 of 40dBm between 24 GHz to 34GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher-level assemblies. Applications include military and space, test instrumentation, and communications.

• Integrated power detector, quiescent drain current is 1400mA typ at (TCASE = 25°C)
• Drain bias voltage is 5V typical at (TCASE = 25°C)
• Frequency range from 18 to 20GHz
• Gain is 14.5dB typical at (TCASE = 25°C)
• Gain flatness is ±1dB typical at (TCASE = 25°C)
• Noise figure is 11dB typical at (TCASE = 25°C)
• Output power for 1dB is 29dBm typical at (TCASE = 25°C)
• Output third-order intercept is 37.5dBm typical at (TCASE = 25°C)
• Input return loss is 8dB typical at (TCASE = 25°C)
• Operating temperature range from -40°C to +85°C, 18-terminal ceramic LCC-HS package

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