ADRF5032BCCZN

ADRF5032BCCZN is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. It operates from 1GHz to 60GHz with insertion loss of lower than 2.0dB and isolation of higher than 32dB. This device has an RF input power handling capability of 24dBm for both through paths and 21dBm for hot switching. The ADRF5032 requires dual-supply voltages of ±3.3V. It employs CMOS and low-voltage transistor to transistor logic (LVTTL)-compatible control. It can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to the ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance are derated. Applications include industrial scanners, test and instrumentation, cellular infrastructure: 5G mmWave, military radios, radars, electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs).

• Ultra-wideband frequency range from 1GHz to 60GHz
• CMOS/LVTTL compatible, no low-frequency spur
• Single-supply operation capability (VDD = 3.3V, VSS = 0V)
• 1.1dB typ insertion loss between RFC and RFx (On) at (1GHz to 18GHz)
• RFC return loss is 22dB typical at (1GHz to 18GHz, TCASE = 25°C)
• Rise and fall time is 5ns typical at (10% to 90% of RF output, TCASE = 25°C)
• Settling time 0.1dB is 35dB typical at (50% VCTL to 0.1dB of final RF output)
• Third-order intercept is 45dBm typical at (two-tone input power = 12dBm each tone, Δf = 1MHz)
• Positive supply current is 130µA typical at (VDD and VSS pins, TCASE = 25°C)
• Operating temperature range from -40°C to +105°C, 12-terminal LGA package

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