DS28E80Q+T

DS28E80Q+T is a gamma radiation-resistant 1-wire memory. It is a user-programmable non-volatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248bytes of user memory that are organized in blocks of 8bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. The device has its own guaranteed unique 64-bit registration number that is factory-programmed into the chip. The communication follows the 1-wire protocol with a 64-bit registration number acting as a node address in the case of a multiple-device 1-wire network. Typical applications include identification of medical consumables, identification and calibration medical tools/accessories.

• Lower block size provides greater flexibility in programming user memory
• Memory is organized as 8byte blocks, each block can be written 8 times
• User-programmable write protection for individual memory blocks
• Advanced 1-wire protocol minimizes interface to just single contact
• Compact package and single IO interface reduces board space and enhances reliability
• Unique factory-programmed, 64-bit identification number
• Communicates at 1-wire standard speed (15.3kbps max) and overdrive speed (76kbps max)
• ±8kV HBM ESD protection (typ) for IO pin
• 6 TDFN package
• Operating temperature range from -40°C to +85°C

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