HMC435AMS8GETR

HMC435AMS8GE is a non-reflective DC to 4GHz GaAs MESFET SPDT switch. This switch is ideal for cellular/3G and WiMAX/4G applications yielding upto 60dB isolation, low 0.8dB insertion loss and +50dBm input IP3. Power handling is excellent up through the 3.8GHz WiMAX band with the switch offering a P1dB compression of +30dBm. On-chip circuitry allows positive voltage control of 0V/+5Volts at very low DC currents. It is widely used in applications such as base stations & repeaters, infrastructure and access points, CATV/CMTS, test instrumentation etc.

• Insertion loss is 0.8dB typical at (DC - 2.5GHz, TA = +25°C, Vctl = 0/+5Vdc)
• Isolation (RFC to RF1/RF2) is 62dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/+5Vdc)
• Input power for 1dB compression is 30dBm typical at (0.5GHz to 4GHz, TA = +25°C, Vctl = 0/+5Vdc)
• Input third order intercept is 54dBm typical at (0.5GHz to 1GHz, TA = +25°C, Vctl = 0/+5Vdc)
• Switching speed is 40ns typical at (DC - 4GHz, TA = +25°C, Vctl = 0/+5Vdc)
• Operating temperature is -40°C to +85°C
• Package style is ultra small MSOP-86

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