LTC7890RUJM#PBF

LTC7890 is a high performance, dual step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100V. This solves many of the challenges traditionally faced when using GaN FETs. It simplifies application design while requiring no protection diodes and no other additional external components compared to a silicon MOSFET solution. The internal smart bootstrap switches prevent overcharging of the BOOSTx pin to the SWx pin high-side driver supplies during dead times, protecting the gate of the top GaN FET. This internally optimizes the gate driver timing on both switching edges to achieve smart near zero dead times, significantly improving efficiency and allowing for high frequency operation, even at high input voltages. Application includes industrial power systems, military avionics and medical systems, telecommunications power systems.

• GaN drive technology fully optimized for GaN FETs
• No catch, clamp, or bootstrap diodes needed
• Internal smart bootstrap switches prevent overcharging of high side driver supplies
• Internally optimized, smart near zero dead times or resistor adjustable dead times
• Split output gate drivers for adjustable turn on and turn off driver strengths
• Accurate adjustable driver voltage and UVLO
• Input supply operating range from 4 to 100V (TJ = −40°C to +150°C)
• Regulated output voltage set point range from 0.8 to 60V (TJ = −40°C to +150°C)
• Soft start charge current is 12μA (typ, TRACK/SS1 and TRACK/SS2 = 0V)
• 40 lead QFN package, temperature range from -40°C to +150°C

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