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Số Lượng | Giá |
---|---|
100+ | US$2.290 |
250+ | US$2.170 |
500+ | US$1.950 |
1000+ | US$1.650 |
Thông Tin Sản Phẩm
Tổng Quan Sản Phẩm
2ED020I12FIXUMA1 is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3V and 5V TTL. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2kV. In addition, a general-purpose operational amplifier and a general-purpose comparator are provided which may be used for instance for current measurement or overcurrent detection.
- On-chip 1 ohm bootstrap diode
- CMOS Schmitt-triggered inputs with pull-down, non-inverting inputs
- Interlocking inputs, dedicated shutdown input with pull-up
- Power supply operating range from 14 to 18V
- High dV/dt immunity, matched propagation delay for both channels
- Low power consumption, general purpose operational amplifier
- 2.4mA typ high side quiescent supply current at (VSH = 15V)
- 85ns typ turn-on propagation delay at (GNDH = 0V 20% Vout)
- 20MHz typ OP gain-bandwidth product
- Storage temperature range from -55°C to 150°C, DSO-18 package
Cảnh Báo
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Thông số kỹ thuật
2Channels
High Side and Low Side
18Pins
SOIC
Inverting
2A
18V
125°C
85ns
-
No SVHC (21-Jan-2025)
Isolated
IGBT, MOSFET, SiC MOSFET
SOIC
Surface Mount
1A
14V
-40°C
85ns
-
MSL 3 - 168 hours
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Pháp Chế và Môi Trường
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