IPT65R033G7XTMA1

IPT65R033G7XTMA1 is a 650V CoolMOS™ C7 Gold series (G7) SJ power device MOSFET. It is for the first time brings together the benefits of the CG OLD Cool MOS™ technology, 4pin Kelvin Source capability and the improved properties of the TOLL package to enable a possible SMD solution for high current topologies such as PFC up to 3KW. Potential applications include PFC stage and hard switching PWM stages e.g. Computing, Server, Telecom, UPS and Solar.

• C7 Gold technology enables best in class RDS(on) in smallest footprint
• Power dissipation is 391W (maximum, TC = 25°C)
• Gate threshold voltage is 3.5V (typ, VDS=VGS, ID=1.44mA, Tj=25°C)
• Fully qualified according to JEDEC for Industrial Applications
• Continuous drain current is 69A (maximum, TC=25°C)
• Drain-source on-state resistance is 0.029ohm (typ, VGS=10V, ID=28.9A, Tj=25°C)
• Gate resistance is 0.85ohm (f=1MHz, open drain, typ)
• Output capacitance is 80pF (typ, VGS=0V, VDS=400V, f=250KHz)
• Turn-on delay time is 20ns (VDD=400V, VGS=13V, ID=28.9A, RG=3.3ohm)
• PG-HSOF-8 package, operating junction temperature range from -55 to 150°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.