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New Semiconductors - Discretes

600V Gallium Nitride (GaN) Transistor

600V Gallium Nitride (GaN) Transistor

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

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NEXPERIA

NSF080120L3A0Q is a High-Efficiency 1200 V SiC MOSFET for Demanding Power Applications

NSF080120L3A0Q is a High-Efficiency 1200 V SiC MOSFET for Demanding Power Applications

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15% OFF online orders Over S$250

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