HMC510LP5E

HMC510LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. The prescaler and RF/2 functions can be disabled to conserve current if not required. Typical application includes point to point/multipoint radio, test equipment and industrial controls, SATCOM, military end-use.

• No external resonator needed
• Frequency range from 8.45 to 9.55GHz (Fo, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Power output is +10dBm (min, RFOUT, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -116dBc/Hz (typ)
• Tune voltage range from 2 to 13V (TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Supply current Icc(Dig) + Icc(Amp) + Icc(RF) is 315mA (typ, TA = +25°C)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc (Amp), Vcc (RF) = +5V)
• Output return loss is 2dB (typ, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• Frequency drift rate is 0.8MHz/°C (typ, TA = +25°C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V)
• QFN package, operating temperature range from -40 to +85°C

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