AT45DB641E-MHN-T

AT45DB641E-MHN-T is a 64Mbit, 1.7V to 3.6V range SPI serial flash memory. This serial-interface sequential access flash memory is ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB641E also supports the RapidS serial interface for applications requiring very high-speed operation. Its 69,206,016 bits of memory are organized as 32,768 pages of 264 bytes each. In addition to the main memory, the AT45DB641E also contains two SRAM buffers of 264 bytes each. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three-step read-modify-write operation.

• Single 1.7V to 3.6V supply, serial peripheral interface (SPI) compatible
• Standard block architecture with added 256-byte page erase for energy efficient data Logging
• Byte-write provides serial EEPROM functionality in a serial NOR flash device
• Extended Vcc operation allows the system memory to operate over the entire voltage range
• Ultra-deep power down, program and erase suspend/resume
• Comprehensive security and unique ID features protect the device from outside tampering
• 400nA ultra-deep power-down current (typical), 85MHz max fSCK frequency
• 25µA standby current typical, 7mA active read current typical
• Industrial temperature range from -40°C to 85°C
• 8-pad DFN package

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