Bipolar Transistors | element14 Vietnam

Bipolar Junction Transistor Arrays - BJT

Bipolar Junction Transistor Arrays - BJT (465)

Bipolar RF Power Transistors

Bipolar RF Power Transistors (1)

Bipolar RF Transistors

Bipolar RF Transistors (158)

Pre-Biased / Digital Bipolar Transistors

Pre-Biased / Digital Bipolar Transistors (1,535)

Single Bipolar Junction Transistors - BJT

Single Bipolar Junction Transistors - BJT (3,529)

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New Semiconductors - Discretes

600V Gallium Nitride (GaN) Transistor

600V Gallium Nitride (GaN) Transistor

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

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TOSHIBA

Silicon N-channel MOS (U-MOS-H)

Silicon N-channel MOS (U-MOS-H)

Meet us at Semitronics Vietnam 2026

Meet us at Semitronics Vietnam 2026

Visit us at Booth AD6-6 at VEC and explore the latest solutions.

13-15 October

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NEXPERIA

Boost your power applications today

Extensive product portfolio & NPI’s