120A Silicon Carbide (SiC) MOSFETs & Modules

Tìm rất nhiều 120A Silicon Carbide (SiC) MOSFETs & Modules tại element14 Vietnam. Chúng tôi cung cấp nhiều loại Silicon Carbide (SiC) MOSFETs & Modules, chẳng hạn như 30A, 31A, 40A & 60A Silicon Carbide (SiC) MOSFETs & Modules từ các nhà sản xuất hàng đầu thế giới bao gồm: Onsemi, Diotec Semiconductor & Rohm.

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

UF3SC120009K4S	4014251 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 8600 µohm TO-247	Each	1+US$99.160 5+US$89.240 10+US$83.950 50+US$78.000	Single	N Channel	120A	1.2kV	8600µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
UG3SC120009K4S	4750191 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.011 ohm TO-247	Each	1+US$65.490 5+US$61.240 10+US$56.980 50+US$53.040	Single	N Channel	120A	1.2kV	0.011ohm	TO-247	4Pins	12V	6V	789W	175°C	EliteSiC Series
SCT4013DLLTRDC	4756134 Bảng Tính RoHS	ROHM Silicon Carbide MOSFET Single N Channel 120 A 750 V 0.0169 ohm TOLL	Each (Supplied on Cut Tape) Cắt Băng	1+US$33.290 5+US$28.920 10+US$26.940	Single	N Channel	120A	750V	0.0169ohm	TOLL	8Pins	18V	4.8V	405W	175°C	-
BSM120D12P2C005	2345472 Bảng Tính RoHS	ROHM Silicon Carbide Bipolar (BJT) Single Transistor N Channel 120 A 1.2 kV 2.7 V	Each	1+US$462.160 5+US$435.630	Half Bridge	N Channel	120A	1.2kV	-	Module	10Pins	-	2.7V	780W	150°C	-
UF3SC065007K4S	4014249 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 650 V 6700 µohm TO-247	Each	1+US$80.730 5+US$78.440 10+US$76.140 50+US$75.230	Single	N Channel	120A	650V	6700µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
UF3N120007K4S	4750183 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 7100 µohm TO-247	Each	1+US$71.600 5+US$63.440 10+US$55.640 50+US$52.480	Single	N Channel	120A	1.2kV	7100µohm	TO-247	4Pins	2V	-4.7V	789W	175°C	EliteSiC Series
UJ4N075005K4S	4750207 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 4800 µohm TO-247	Each	1+US$48.130 5+US$45.370 10+US$42.600 50+US$39.840 100+US$37.070	Single	N Channel	120A	750V	4800µohm	TO-247	4Pins	2V	-3.7V	714W	175°C	EliteSiC Series
DIW120SIC022-AQ	4552614 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$73.700 5+US$63.120 10+US$58.880	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	340W	175°C	-
DIF120SIC022	4552616 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$31.720 5+US$27.330 10+US$25.780	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
DIW120SIC022	4752370 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$30.070 5+US$26.170 10+US$22.050 50+US$22.040	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	580W	175°C	-
DIF120SIC022-AQ	4552613 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$67.690 5+US$60.110 10+US$58.880	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
UJ4SC075006K4S	4221971 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 5.9 mohm TO-247	Each	1+US$56.860 5+US$52.680 10+US$48.490 50+US$44.530 100+US$40.570	Single	N Channel	120A	750V	5.9mohm	TO-247	4Pins	12V	6V	714W	175°C	-
UG4SC075006K4S	4750193 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 7500 µohm TO-247	Each	1+US$34.030 5+US$30.150 10+US$26.450 50+US$24.950 100+US$24.210	Single	N Channel	120A	750V	7500µohm	TO-247	4Pins	12V	6V	714W	175°C	EliteSiC Series