Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
SCTH70N120G2V-7	3748720 Bảng Tính RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 90 A 1.2 kV 0.021 ohm H2PAK	Each (Supplied on Cut Tape) Cắt Băng	1+US$38.840 5+US$35.540 10+US$32.900 50+US$31.140 100+US$29.450	Single	N Channel	90A	1.2kV	0.021ohm	H2PAK	7Pins	18V	2.45V	469W	175°C	-
C3M0021120K	3227325 Bảng Tính RoHS	WOLFSPEED Silicon Carbide MOSFET Single N Channel 100 A 1.2 kV 0.021 ohm TO-247	Each	1+US$38.510 5+US$34.660 10+US$32.610 50+US$30.300 100+US$28.330	Single	N Channel	100A	1.2kV	0.021ohm	TO-247	4Pins	15V	2.5V	469W	175°C	C3M
SCTW70N120G2V	3577228 Bảng Tính RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 91 A 1.2 kV 0.021 ohm HiP247	Each	1+US$49.830 5+US$44.850 10+US$42.190 50+US$39.200 100+US$36.540	Single	N Channel	91A	1.2kV	0.021ohm	HiP247	3Pins	18V	2.45V	547W	200°C	-
SCTWA70N120G2V-4	3806246 Bảng Tính RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 91 A 1.2 kV 0.021 ohm HiP247	Each	1+US$50.380 5+US$45.340 10+US$42.650 50+US$39.630 100+US$36.940	Single	N Channel	91A	1.2kV	0.021ohm	HiP247	4Pins	18V	2.45V	547W	200°C	-
TW015N65C,S1F(S	4049751 Bảng Tính RoHS	TOSHIBA Silicon Carbide MOSFET Single N Channel 100 A 650 V 0.021 ohm TO-247	Each	1+US$51.710 5+US$46.540 10+US$43.790 50+US$43.680	Single	N Channel	100A	650V	0.021ohm	TO-247	3Pins	18V	5V	342W	175°C	-
SCT014HU65G3AG	4753399 Bảng Tính RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 110 A 650 V 0.021 ohm HU3PAK	Each (Supplied on Cut Tape) Cắt Băng	1+US$15.480 5+US$13.890 10+US$12.290 50+US$12.050 100+US$11.810 Thêm định giá…	Single	N Channel	110A	650V	0.021ohm	HU3PAK	7Pins	18V	4.2V	483W	175°C	-