Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
C3M0016120K	3212276 Bảng Tính RoHS	WOLFSPEED Silicon Carbide MOSFET Single N Channel 115 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$92.500 5+US$83.250 10+US$78.310 50+US$72.760	Single	N Channel	115A	1.2kV	0.0223ohm	TO-247	4Pins	15V	3.6V	556W	175°C	C3M
DIW120SIC022-AQ	4552614 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$73.700 5+US$63.120 10+US$58.880	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	340W	175°C	-
DIF120SIC022	4552616 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$31.720 5+US$27.330 10+US$25.780	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
DIW120SIC022	4752370 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$30.070 5+US$26.170 10+US$22.050 50+US$22.040	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	580W	175°C	-
DIF120SIC022-AQ	4552613 Bảng Tính RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+US$67.690 5+US$60.110 10+US$58.880	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-