Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTH4L022N120M3S	3872098 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 68 A 1.2 kV 0.022 ohm TO-247	Each	1+US$18.800 5+US$17.560 10+US$16.320 50+US$15.080 100+US$13.840 Thêm định giá…	Single	N Channel	68A	1.2kV	0.022ohm	TO-247	4Pins	18V	2.72V	352W	175°C	EliteSiC Series
NVBG022N120M3S	4036823 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 58 A 1.2 kV 0.022 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$28.460 5+US$24.600 10+US$20.740 50+US$20.330 100+US$19.920 Thêm định giá…	Single	N Channel	58A	1.2kV	0.022ohm	TO-263HV (D2PAK)	7Pins	18V	2.72V	234W	175°C	EliteSiC Series
NVBG022N120M3S-IE	4854141 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 100 A 1.2 kV 0.022 ohm D2PAK	Each (Supplied on Cut Tape) Cắt Băng	1+US$27.540 5+US$23.810 10+US$20.080 50+US$19.320 100+US$18.940 Thêm định giá…	Single	N Channel	100A	1.2kV	0.022ohm	D2PAK	7Pins	18V	2.72V	441W	175°C	EliteSiC Series
NTBG022N120M3S	4036812 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 58 A 1.2 kV 0.022 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$20.100 5+US$16.790 10+US$13.470 50+US$13.210 100+US$12.940 Thêm định giá…	Single	N Channel	58A	1.2kV	0.022ohm	TO-263HV (D2PAK)	7Pins	18V	2.72V	234W	175°C	EliteSiC Series