Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

NTH4L014N120M3P.	4130206 Bảng Tính RoHS	ONSEMI MOSFET N-CH 1.2KV 127A TO-247	Each	1+US$30.940 5+US$26.360 10+US$21.780 50+US$21.350 100+US$20.910 Thêm định giá…	Single	N Channel	127A	1.2kV	0.014ohm	TO-247	4Pins	18V	4.63V	686W	175°C	TUK SGACK902S Keystone Coupler
NTBG014N120M3P	4079787 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 104 A 1.2 kV 0.014 ohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$32.340 5+US$27.790 10+US$23.230 50+US$22.770 100+US$22.310	Single	N Channel	104A	1.2kV	0.014ohm	TO-263 (D2PAK)	7Pins	18V	4.63V	227W	175°C	EliteSiC Series
NTH4L014N120M3P	4079789 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 127 A 1.2 kV 0.014 ohm TO-247	Each	1+US$30.940 5+US$26.360 10+US$21.780 50+US$21.350 100+US$20.910 Thêm định giá…	Single	N Channel	127A	1.2kV	0.014ohm	TO-247	4Pins	18V	4.63V	686W	175°C	EliteSiC Series
NTBG014N120M3P	4143092 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 104 A 1.2 kV 0.014 ohm TO-263 (D2PAK)	Each	800+US$37.360	Single	N Channel	104A	1.2kV	0.014ohm	TO-263 (D2PAK)	7Pins	18V	4.63V	227W	175°C	-