Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
IMW65R075M2HXKSA1	4803615 Bảng Tính RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 26.6 A 650 V 0.095 ohm TO-247	Each	1+US$8.580 10+US$5.060 100+US$3.670 500+US$3.660 1000+US$3.640	Single	N Channel	26.6A	650V	0.095ohm	TO-247	3Pins	18V	5.6V	111W	175°C	CoolSiC G2 Series
NVH4L160N120SC1	3464025 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 17.3 A 1.2 kV 0.16 ohm TO-247	Each	1+US$14.370 5+US$11.080 10+US$7.790 50+US$7.640 100+US$7.510 Thêm định giá…	Single	N Channel	17.3A	1.2kV	0.16ohm	TO-247	4Pins	20V	3.1V	111W	175°C	EliteSiC Series
IMWH170R450M1XKSA1	4412432 Bảng Tính RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 10 A 1.7 kV 0.39 ohm TO-247	Each	1+US$9.060 10+US$5.070 100+US$4.110 500+US$4.030 1000+US$3.950	Single	N Channel	10A	1.7kV	0.39ohm	TO-247	3Pins	15V	5.7V	111W	175°C	CoolSiC Series
TW083Z65C,S1F(S	4247126 Bảng Tính RoHS	TOSHIBA Silicon Carbide MOSFET Single N Channel 30 A 650 V 0.083 ohm TO-247	Each	1+US$11.070 5+US$9.960 10+US$9.370 50+US$9.000	Single	N Channel	30A	650V	0.083ohm	TO-247	4Pins	18V	5V	111W	175°C	-
TW083U65C,RQ(S	4752163 Bảng Tính	TOSHIBA Silicon Carbide MOSFET Single N Channel 28 A 650 V 0.124 ohm TOLL	Each (Supplied on Cut Tape) Cắt Băng	1+US$12.130 5+US$10.840 10+US$9.640 50+US$9.120 100+US$8.880	Single	N Channel	28A	650V	0.124ohm	TOLL	8Pins	18V	5V	111W	175°C	-
TW092V65C,LQ(S	4697804 Bảng Tính RoHS	TOSHIBA Silicon Carbide MOSFET Single N Channel 27 A 650 V 0.136 ohm DFN	Each (Supplied on Cut Tape) Cắt Băng	1+US$11.960 5+US$10.650 10+US$9.250 50+US$8.810 100+US$8.460	Single	N Channel	27A	650V	0.136ohm	DFN	5Pins	18V	5V	111W	175°C	-
NTH4L160N120SC1	3464006 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 17.3 A 1.2 kV 0.16 ohm TO-247	Each	1+US$7.920 5+US$6.730 10+US$5.540 50+US$5.390 100+US$5.230 Thêm định giá…	Single	N Channel	17.3A	1.2kV	0.16ohm	TO-247	4Pins	20V	3.1V	111W	175°C	EliteSiC Series
TW083N65C,S1F(S	4049754 Bảng Tính RoHS	TOSHIBA Silicon Carbide MOSFET Single N Channel 30 A 650 V 0.113 ohm TO-247	Each	1+US$8.440 5+US$7.520 10+US$6.530 50+US$6.220 100+US$5.980	Single	N Channel	30A	650V	0.113ohm	TO-247	3Pins	18V	5V	111W	175°C	-
IMZA65R075M2HXKSA1	4803616 Bảng Tính RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 26.6 A 650 V 0.095 ohm TO-247	Each	1+US$8.300 10+US$4.390 100+US$3.790 500+US$3.720 1000+US$3.640	Single	N Channel	26.6A	650V	0.095ohm	TO-247	4Pins	18V	5.6V	111W	175°C	CoolSiC G2 Series