Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTBG080N120SC1	3528496 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 30 A 1.2 kV 0.08 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$13.640 5+US$10.980 10+US$8.310 50+US$8.150 100+US$7.980 Thêm định giá…	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
NVBG080N120SC1	3528514 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 30 A 1.2 kV 0.08 ohm TO-263HV (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$12.630 5+US$12.080 10+US$11.530 50+US$10.970 100+US$10.420 Thêm định giá…	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
NVBG080N120SC1	4382111 Bảng Tính RoHS	ONSEMI SIC MOSFET N-CH 1.2KV 30A TO-263HV-7	Each	1+US$25.590 5+US$23.030 10+US$21.670 50+US$20.130 100+US$18.770 Thêm định giá…	Single	N Channel	30A	1.2kV	0.08ohm	TO-263HV (D2PAK)	7Pins	20V	3V	179W	175°C	EliteSiC Series
LSIC1MO120E0080	3361191 Bảng Tính RoHS	LITTELFUSE Silicon Carbide MOSFET Single N Channel 39 A 1.2 kV 0.08 ohm TO-247	Each	1+US$28.280 5+US$25.470 10+US$22.650 50+US$21.120 100+US$19.590 Thêm định giá…	Single	N Channel	39A	1.2kV	0.08ohm	TO-247	3Pins	20V	2.8V	179W	150°C	-