Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
IMBG65R010M2HXTMA1	4640386 Bảng Tính RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 158 A 650 V 9100 µohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$25.930 5+US$21.960 10+US$17.990 50+US$17.710 100+US$17.430 Thêm định giá…	Single	N Channel	158A	650V	9100µohm	TO-263 (D2PAK)	7Pins	20V	5.6V	535W	175°C	CoolSiC Gen 2 Series
IMT65R015M2HXUMA1	4677107 Bảng Tính RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 131 A 650 V 0.0132 ohm HSOF	Each (Supplied on Cut Tape) Cắt Băng	1+US$20.620 5+US$16.970 10+US$13.320 50+US$13.300 100+US$13.270 Thêm định giá…	Single	N Channel	131A	650V	0.0132ohm	HSOF	8Pins	20V	5.6V	535W	175°C	CoolSiC Gen 2 Series
NTHL020N120SC1	3367855 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 103 A 1.2 kV 0.02 ohm TO-247	Each	1+US$53.050 5+US$47.750 10+US$44.920 50+US$41.730 100+US$38.900	Single	N Channel	103A	1.2kV	0.02ohm	TO-247	3Pins	20V	2.7V	535W	175°C	EliteSiC Series
NTH4L028N170M1.	4070487 Bảng Tính RoHS	ONSEMI MOSFET N-CH 1.7KV 81A TO-247	Each	1+US$39.630 5+US$37.500 10+US$35.360 50+US$33.220 100+US$31.080	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	TUK SGACK902S Keystone Coupler
NTH4L028N170M1	4079791 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 81 A 1.7 kV 0.028 ohm TO-247	Each	1+US$39.630 5+US$34.480 10+US$29.320 50+US$28.740 100+US$28.150	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	EliteSiC Series