ADG201ASRZ-EP-RL7

ADG201ASRZ-EP-RL7 is a monolithic CMOS device comprising four independently selectable switch. It is designed on an enhanced LC²MOS process which gives an increased signal handling capability of ±15V. This switch also features high switching speed and low RON. It consists of four SPST switches. It differs only in digital logic is inverted. The device exhibits break before switching action. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.

• 60 ohm typical RON resistance
• 0.5nA typical low leakage current
• TON is 300ns maximum, TOFF is 250ns maximum
• 80dB typical OFF isolation
• Channel to channel crosstalk is 80dB typical
• Power dissipation is 33mW typical
• Operating temperature range from -55°C to +125°C
• Package style is 16-lead NSOIC

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