ADL9006ACGZN

ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2GHz and 28GHz. The amplifier provides 15.5dB of gain, 2.5dB noise figure, 26dBm output third-order intercept (OIP3), and 20dBm of output power for 1dB compression (P1dB) while requiring 53mA from a 5V supply. The device is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53mA. It is used in application such as test instrumentation, military and space, local oscillator driver amp etc.

• P1dB is 20dBm typical at (2GHz to 6GHz)
• PSAT is 20.5dBm typical at (2GHz to 6GHz)
• 50 ohm matched input and output
• Gain variation over temperature is 0.007dB/°C typ at (TA = 25°C, VDD = 5V, IDD = 53mA)
• Input return loss is 11dB typical at (TA = 25°C, VDD = 5V, IDD = 53mA)
• Output return loss is 12dB typical at (TA = 25°C, VDD = 5V, IDD = 53mA)
• Operating temperature is -40°C to +85°C
• Package style is 32-lead lead frame chip scale, premolded cavity [LFCSP-CAV]

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