ADRF5715BCCZN

ADRF5715BCCZN is a silicon, 1-bit digital attenuator with 16dB attenuation. It operates from 1MHz to 30GHz with better than 1.15dB of insertion loss and excellent attenuation accuracy. The ATTIN and ATTOUT port of the device has an RF power handling capability of 30dBm steady-state average and 33dBm steady state peak. It requires a dual-supply voltage of +3.3V and -3.3V. This device features complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. It can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. It is used in applications such as industrial scanners, test and instrumentation, cellular infrastructure: 5G millimetre wave, military radios, radars, and electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs).

• Single-supply operation supported, tight in relative phase
• No low frequency spurious signals, CMOS-/LVTTL-compatible
• Insertion loss is 0.6dB typical at (100MHz to 8GHz)
• Attenuation accuracy is ±0.10dB typical at (100MHz to 8GHz)
• 0.1dB power compression (insertion loss state) is 33dBm typical at (TCASE = 25°C)
• 16dB attenuation state is 30dBm typical at ((TCASE) = 25°C with a 50 ohm system)
• 16dB attenuation state is 49dBm typical at ((TCASE) = 25°C with a 50 ohm system)
• RF amplitude settling time (0.1dB) is 23μs typical at ((TCASE) = 25°C with a 50 ohm system)
• Rise time and fall time is 8.5μs typical at (10% to 90% of RFOUT)
• Operating temperature range from -40°C to +105°C, 12-terminal LGA package

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