HMC1121LP6GE

HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4W power amplifier with an integrated temperature compensated on-chip power detector. This exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna. Application includes point to point radios, point to multipoint radios, very small aperture terminals (VSATs) and satellite communications (SATCOMs), military electronic warfare (EW) and electronic counter measures (ECM).

• High saturated output power is 36.5dBm (typ, at 30% PAE, TA = 25°C)
• High output third-order intercept is 44dBm (typ, measurement taken at POUT/tone = 28dBm)
• High gain is 28dB (typical)
• High output power for 1dB compression (P1dB) is 36dBm (typ, TA = 25°C)
• Total current is 2200mA (typ, TA = 25°CVDD = VDD1 = VDD2 = VDD3 = VDD4 = 7V)
• Output third order intercept is 43dBm (typ, measurement taken at POUT/tone = 28dBm)
• Supply voltage range from 5 to 7.5V (TA = 25°C, VDD = VDD1 = VDD2 = VDD3 = VDD4 = 7V)
• 40 lead LFCSP package, operating temperature range from -40°C to +115°C

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