HMC219BMS8GE

HMC219B is a ultraminiature, general-purpose, double balanced mixer. This passive monolithic microwave integrated circuit (MMIC) mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry. This device can be used as an upconverter, downconverter, biphase demodulator, or phase comparator from 2.5GHz to 7GHz. It provides excellent local oscillator (LO) to radio frequency (RF) isolation and LO to intermediate frequency (IF) isolation due to optimized balun structures. It eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques. It is used in application such as microwave radios, high performance radio local area network (HiperLAN) and unlicensed national information infrastructure (U-NII), industrial, scientific, and medical (ISM) etc.

• Conversion loss is 9dB typical at (TA = 25°C, IF = 100MHz)
• LO to RF isolation is 40dB typical at (TA = 25°C, IF = 100MHz)
• LO to IF isolation is 35dB typical at (TA = 25°C, IF = 100MHz)
• RF to IF isolation is 22dB typical at (TA = 25°C, IF = 100MHz)
• Input IP3 is 18dBm typical at (TA = 25°C, IF = 100MHz)
• Input P1dB is 11dBm typical at (TA = 25°C, IF = 100MHz)
• Input IP2 is 55dBm typical at (TA = 25°C, IF = 100MHz)
• Passive double balanced topology
• Operating temperature is -40°C to +85°C
• Package style is 8-lead MINI-SO-EP

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