HMC784AMS8GETR

HMC784AMS8GE is a high power SPDT switch. It is used in transmit-receive applications which require very low distortion at high input signal power levels. This device can control signals from DC to 4GHz. The design provides exceptional intermodulation performance; <gt/> +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3Vdc to +8Vdc at very low DC current with control inputs compatible with CMOS logic families. It is widely used in applications such as cellular/4G infrastructure, WiMAX, WiBro & fixed wireless, automotive telematics, mobile radio, test equipment etc.

• Insertion loss is 0.3dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Isolation is 28dB typical at (DC - 4GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Return loss (on state) is 30dB typical at (DC - 1GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Input power for 0.1dB compression is 31dBm typical at (1GHz - 4GHz, TA = +25°C)
• Input third order intercept is 61dBm typical at (0.02GHz - 0.1GHz, TA = +25°C)
• Switching characteristics is 82ns typical at (DC - 4GHz, TA = +25°C, Vctl = 0/Vdd, Vdd = +5V)
• Operating temperature is -40°C to +85°C
• Package style is MSOP8G

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