HMC8500PM5E

HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10W. This is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification. The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components. Application includes extended battery operation for public mobile radios, power amplifier stage for wireless infrastructures, test and measurement equipment, commercial and military radars, general-purpose transmitter amplification.

• Internal prematching, simple and compact external tuning for optimal performance
• Small signal gain is 15.0dB (typ, TA = 25°C, VDD = 28V, IDDQ = 100mA)
• Return loss is 7dB (typ, input, TA = 25°C, supply voltage (VDD) = 28V)
• Output power is 40dBm (typ, input power (PIN) = 28dBm)
• Power added efficiency is 55% (typ, PIN = 28dBm, TA = 25°C, supply voltage (VDD) = 28V)
• Output third order intercept is 47dBm (typ, POUT per tone = 30dBm, TA = 25°C)
• Noise figure is 7dB (typ, TA = 25°C, VDD = 28V)
• Quiescent current is 100mA (typ, TA = 25°C, VDD = 28V)
• Supply voltage range from 24 to 32V (TA = 25°C, VDD = 28V)
• 32 lead LFCSP package, operating temperature range from -40°C to +85°C

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