NTHL099N60S5

SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best-in-class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency. Applications include telecom / server power supplies, industrial power supplies and EV charger, cloud system and UPS / solar.

• Ultra low gate charge (typical Qg= 48nC)
• Low time related output capacitance (typical Coss(tr.)= 642pF)
• Optimized capacitance 650V at TJ = 150°C typical RDS(on) = 79.2mohm
• 100% avalanche tested
• Internal gate resistance of 6.9ohm
• Low switching loss, low switching loss
• Lower peak Vds and lower Vgs oscillation
• Low time related output capacitance (typical Coss(tr.)= 642pF)