Silicon Carbide (SiC) MOSFETs & Modules

Mã Số Linh Kiện Nhà Sản Xuất	Mã Đơn Hàng	Nhà Sản Xuất / Mô Tả	Giá cho	Giá	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

NTHL020N090SC1	3367854 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 118 A 900 V 0.02 ohm TO-247	Each	1+US$25.480	Single	N Channel	118A	900V	0.02ohm	TO-247	3Pins	15V	2.7V	503W	175°C	EliteSiC Series
NTBG020N120SC1	3367851 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$38.960 5+US$34.220 10+US$29.470 50+US$29.460 100+US$29.450	Single	N Channel	98A	1.2kV	0.02ohm	TO-263 (D2PAK)	7Pins	20V	2.7V	468W	175°C	EliteSiC Series
MSC040SMA120B	3929950 Bảng Tính RoHS	MICROCHIP Silicon Carbide MOSFET Single N Channel 66 A 1.2 kV 0.04 ohm TO-247	Each	1+US$22.340 25+US$20.890 100+US$19.440	Single	N Channel	66A	1.2kV	0.04ohm	TO-247	3Pins	20V	2.7V	323W	175°C	-
G3R20MT17N	3598626 Bảng Tính RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 100 A 1.7 kV 0.02 ohm SOT-227	Each	1+US$168.050 5+US$164.170	Single	N Channel	100A	1.7kV	0.02ohm	SOT-227	4Pins	15V	2.7V	523W	175°C	G3R
NTHL020N120SC1	3367855 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 103 A 1.2 kV 0.02 ohm TO-247	Each	1+US$38.650 5+US$38.490 10+US$38.330 50+US$38.170 100+US$38.000	Single	N Channel	103A	1.2kV	0.02ohm	TO-247	3Pins	20V	2.7V	535W	175°C	EliteSiC Series
G3R45MT17K	3598624 Bảng Tính RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 61 A 1.7 kV 0.045 ohm TO-247	Each	1+US$62.220 5+US$56.440	Single	N Channel	61A	1.7kV	0.045ohm	TO-247	4Pins	15V	2.7V	438W	175°C	G3R
NTHL060N090SC1	3367856 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 46 A 900 V 0.06 ohm TO-247	Each	1+US$13.690 5+US$11.390 10+US$9.090 50+US$8.910 100+US$8.720 Thêm định giá…	Single	N Channel	46A	900V	0.06ohm	TO-247	3Pins	15V	2.7V	221W	175°C	EliteSiC Series
NVHL080N120SC1A	3528518 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 31 A 1.2 kV 0.08 ohm TO-247	Each	1+US$13.790 5+US$12.410 10+US$11.670 50+US$10.850 100+US$10.110 Thêm định giá…	Single	N Channel	31A	1.2kV	0.08ohm	TO-247	3Pins	20V	2.7V	178W	175°C	EliteSiC Series
NVBG020N120SC1	3265484 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 98 A 1.2 kV 0.02 ohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cắt Băng	1+US$55.380 5+US$50.160 10+US$44.940 50+US$42.550 100+US$40.150	Single	N Channel	98A	1.2kV	0.02ohm	TO-263 (D2PAK)	7Pins	20V	2.7V	468W	175°C	EliteSiC Series
NVH4L020N120SC1	3464022 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 102 A 1.2 kV 0.02 ohm TO-247	Each	1+US$48.220 5+US$44.330 10+US$40.440 50+US$39.640 100+US$39.020	Single	N Channel	102A	1.2kV	0.02ohm	TO-247	4Pins	20V	2.7V	510W	175°C	EliteSiC Series
NTHL080N120SC1A	3528502 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 31 A 1.2 kV 0.08 ohm TO-247	Each	1+US$13.840 5+US$10.780 10+US$9.680	Single	N Channel	31A	1.2kV	0.08ohm	TO-247	3Pins	20V	2.7V	178W	175°C	EliteSiC Series
NTH4L020N120SC1	3464002 Bảng Tính RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 102 A 1.2 kV 0.02 ohm TO-247	Each	1+US$35.460 5+US$31.620 10+US$27.770 50+US$27.220 100+US$26.860	Single	N Channel	102A	1.2kV	0.02ohm	TO-247	4Pins	20V	2.7V	510W	175°C	EliteSiC Series
LSIC1MO120G0040	3996617 Bảng Tính RoHS	LITTELFUSE Silicon Carbide MOSFET Single N Channel 70 A 1.2 kV 0.04 ohm TO-247	Each	1+US$35.420 5+US$31.900 10+US$28.370 50+US$26.450 100+US$24.530	Single	N Channel	70A	1.2kV	0.04ohm	TO-247	4Pins	20V	2.7V	357W	175°C	LSIC1MO120 Series
G3R160MT17J-TR	4354955 Bảng Tính RoHS	GENESIC SIC MOSFET N-CH 1.7KV 22A 187W	Each	1+US$14.320 5+US$12.820	Single	N Channel	22A	1.7kV	0.16ohm	TO-263 (D2PAK)	7Pins	15V	2.7V	187W	175°C	G3R Series
BSM120D12P2C005	2345472 Bảng Tính RoHS	ROHM Silicon Carbide Bipolar (BJT) Single Transistor N Channel 120 A 1.2 kV 2.7 V	Each	1+US$453.090 5+US$438.450	Half Bridge	N Channel	120A	1.2kV	-	Module	10Pins	-	2.7V	780W	150°C	-
BSM300D12P2E001	3573225 Bảng Tính RoHS	ROHM Silicon Carbide MOSFET Half Bridge Dual N Channel 300 A 1.2 kV Module	Each	1+US$811.950	Half Bridge	Dual N Channel	300A	1.2kV	-	Module	-	-	2.7V	1.875kW	150°C	-