CY7C1049G30-10VXI

CY7C1049G30-10VXI is a high-performance CMOS fast 4-Mbit (512K words × 8-bit) static RAM device with embedded ECC. Data write is performed by asserting the chip enable (active low CE) and write enable (active low WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data read is performed by asserting the chip enable (CE) and output enable (active low OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). Application includes human machine interface.

• Without ERR output
• Voltage range from 2.2V to 3.6V, 10ns speed, 65nm process technology
• Operating ICC range from 38mA typ (f=fmax.,TA=25°C, VCC=3V)
• Automatic CE power-down current – CMOS inputs is 6mA typ (Max VCC, 0.2V)
• 1.0V data retention, TTL-compatible inputs and outputs
• Error indication (ERR) pin to indicate 1-bit error detection and correction
• Input capacitance is 10pF (TA=25°C, f=1MHz, VCC=VCC(typ)
• I/O capacitance is 10pF (TA=25°C, f=1MHz, VCC=VCC(typ)
• VCC for data retention is 1V min (-40°C to 85°C)
• 36-pin moulded SOJ package, industrial temperature range from -40°C to +85°C