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| Dạng Đóng Gói | Số Lượng | Đơn giá: | Tổng |
|---|---|---|---|
| Cắt Băng | 1 | US$1.610 | US$1.61 |
| Tổng Giá | US$1.61 | ||
| Số Lượng | Giá |
|---|---|
| 1+ | US$1.610 |
| 10+ | US$1.070 |
| 50+ | US$1.010 |
| 100+ | US$0.942 |
| 250+ | US$0.886 |
| 500+ | US$0.885 |
Thông Tin Sản Phẩm
Tổng Quan Sản Phẩm
1EDB6275FXUMA1 is an EiceDRIVER™ single-channel isolated gate driver IC. It is designed to drive Si, SiC, and GaN power switches. It provides isolation by means of on-chip coreless transformer (CT) technology. With tight timing specifications, it is designed for fast-switching medium-to-high power systems. Excellent common-mode rejection, low part-to-part skew, fast signal propagation, and small package size make the device a superior alternative to high-side driving solutions using optocouplers or pulse transformers. It is used in applications such as server and telecom switch-mode power supplies (SMPS), EV off-board chargers, low-voltage drives and power tools, solar micro inverters, solar optimizers, industrial power supplies (SMPS, residential UPS).
- Single-channel isolated gate driver, UL 1577 with VISO = 3000VRMS certified
- Separate low impedance source and sink outputs
- Fast clamping of parasitics-induced output overshoots under UVLO conditions
- Fast start-up times and fast recovery after supply glitches
- High common-mode transient immunity (CMTI <gt/> 300V/ns)
- Fully qualified according JEDEC for industrial applications
- 5A peak source current, 9A sink current, 12.2V/11.5V (UVLO ON/OFF)
- IVDDI quiescent current is 1mA maximum at (VDDI = 3.3V, VDDO = 12V)
- Rise time is 8.3ns typical at (VDDO = 18V, CLOAD = 1.8nF)
- Junction temperature range from -40°C to 150°C, DSO-8 package
Thông số kỹ thuật
1Channels
High Side
8Pins
Surface Mount
5.4A
3V
-40°C
45ns
-
No SVHC (25-Jun-2025)
Isolated
MOSFET, SiC MOSFET, GaN Power Device
SOIC
Inverting, Non-Inverting
9.8A
15V
150°C
45ns
-
Tài Liệu Kỹ Thuật (1)
Pháp Chế và Môi Trường
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