2ED21834S06JXUMA1

2ED21834S06JXUMA1 is a 650V half-bridge gate driver with integrated bootstrap diode. It is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11VDC on VS pin (VCC = 15V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650V.

• Unique Infineon thin-film-silicon on insulator (SOI)-technology
• Negative VS transient immunity of 100V
• Floating channel designed for bootstrap operation
• Integrated ultra-fast, low resistance bootstrap diode
• Independent under voltage lockout for both channels
• Schmitt trigger inputs with hysteresis
• Separate logic and power ground with the 2ED21834S06J version
• Interlocking function with internal 400ns dead time and programmable up to 5µs with ext resistor
• HIN, /LIN input logic, 50% lower level-shift losses
• DSO -14 package, ambient temperature range from -40 to 125°C

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