CY62167GE30-45ZXI

CY62167GE30-45ZXI is a CY62167GE30 high-performance CMOS, low-power (MoBL®) SRAM device with embedded ECC. The CY62167GE30 device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle. To access device with a single chip enable input, assert the chip enable (CE) input LOW. To access dual chip enable devices, assert both chip enable inputs CE1 as LOW and CE2 as HIGH. It has a unique byte power-down feature where, if both the Byte Enables (BHE and BLE) are disabled, the device seamlessly switch to the standby mode irrespective of the state of the chip enables, thereby saving power.

• Ultra-low standby current, typical standby current:1.5µA
• High speed: 45ns
• Embedded error-correcting code (ECC) for single-bit error correction
• Operating voltage range: 2.2V to 3.6V
• 1.0V data retention
• Transistor-transistor logic (TTL) compatible inputs and outputs
• Error indication (ERR) pin to indicate 1-bit error detection and correction
• 48-pin TSOP I package
• Industrial temperature range from –40°C to +85°C
• 2.2V to 3.6V voltage rating (VCC)