FM25040B-G

FM25040B-G is a 4-Kbit (512 × 8) serial (SPI) F-RAM memory. It is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The FM25040B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25040B ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The memory provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 20MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection, hardware protection using write protect (active-low WP) pin
• S/W protection using write disable instruction, software block protection for 1/4, 1/2/whole array
• Voltage operation: VDD=4.5V to 5.5V
• VDD supply current is 0.25mA at fSCK=1 MHz
• VDD standby current is 4µA typ at active-low CS=VDD, all other inputs VSS or VDD
• 8-pin SOIC package, -40°C to +85°C industrial temperature range