S25FS512SAGNFI011

S25FS512SAGNFI011 is a SPI multi-I/O, 1.8V, 512Mb (64MB) FS-S flash memory. It is a flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. The FS-S eclipse architecture features a page programming buffer that allows up to 512 bytes to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The S25FS512S product offers high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is an excellent solution for systems with limited space, signal connections, and power. This is ideal for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data.

• Read- commands: normal/fast/dual I/O/quad I/O/DDR quad I/O, modes: burst wrap/continuous (XIP), QPI
• Serial flash discoverable parameters and common flash interface (CFI) for configuration information
• 100,000 program-erase cycles, minimum
• 20 year data retention, minimum
• One time program (OTP) array of 1024 bytes
• Status Register bits to control protection against program or erase of a contiguous range of sectors
• Advanced sector protection (ASP), individual sector protection controlled by boot code or password
• Supply voltage range from 1.7V to 2.0V
• 8-contact WSON package
• Industrial temperature range from -40°C to +85°C