S29GL256P10TFI013

S29GL256P10TFI013 is a Mirrorbit® page-mode flash memory IC fabricated on 90nm process technology. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 32 words/64bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption. It protects first or last sector regardless of sector protection settings and accelerates programming time (when VHH is applied) for greater throughput during system production.

• Single 3V read/program/erase (2.7-3.6V), enhanced versatile/O™ control
• 8-word/16-byte page read buffer, hardware reset input (RESET#) resets device
• 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
• Uniform 64Kword/128 Kbyte sector architecture: two hundred fifty-six sectors
• 20-year data retention typical, support for CFI (common flash interface)
• Suspend and resume commands for program and erase operations, secured silicon sector region
• Write operation status bits indicate program and erase operation completion
• Unlock bypass program command to reduce programming time
• 100ns speed, 56-pin thin small outline package (TSOP) standard pinout (TSO56)
• Industrial –40°C to 85°C temperature range, VIO=VCC=2.7 to 3.6V, highest address sector protected