STGAP2SICSTR

STGAP2SICSTR is a galvanically isolated 4A single gate driver for SiC MOSFETs. It provides galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shutdown are included to facilitate the design of highly reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The input-to-output propagation delay is less than 75ns, which delivers high PWM control accuracy. A standby mode is available to reduce idle power consumption.

• Driver current capability: 4A sink/source at 25°C
• dV/dt transient immunity ±100V/ns in full temperature range
• Overall input-output propagation delay is 75ns
• UVLO function, gate driving voltage up to 26V
• Temperature shut-down protection, standby function
• 6KV galvanic isolation, UL 1577 recognized
• Maximum switching frequency is 1MHz
• Common-mode transient immunity, dVISO/dt is 100V/ns minimum (VCM = 1500V)
• GON-GOFF output configuration, SO-8W package
• Operating junction temperature range from -40 to 125°C