HMC505LP4E

HMC505LP4E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes and buffer amplifiers. Covering 6.8 to 7.4GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure. Power output is +11dBm typical from a single supply of +3V at 80mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package. Used as low noise MMIC VCO with buffer amplifier for VSAT and microwave radio, test equipment and industrial controls, military.

• Power output of +11dBm (typical)
• SSB phase noise of- 106dBc/Hz at 100KHz Offset, Vtune= +5V at RF output
• No external resonator needed
• Single supply of +3V at 80mA
• Maximum tune voltage (Vtune) of 11V
• Frequency drift rate of 0.8MHz/°C
• 6MHzpp pulling (into a 2.0:1 VSWR), 20MHz/V pushing at Vtune= +5V
• Output return loss of 9dB
• Maximum tune port leakage current of 10μA
• Operating temperature range from -40 to +85 °C

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